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Optical Float-Zone Grown Bulk beta-Ga2O3-Based Linear MSM Array of UV-C Photodetectors

Pratiyush, Anamika Singh and Ul Muazzam, Usman and Kumar, Sandeep and Vijayakumar, P and Ganesamoorthy, S and Subramanian, N and Muralidharan, Rangarajan and Nath, Digbijoy N (2019) Optical Float-Zone Grown Bulk beta-Ga2O3-Based Linear MSM Array of UV-C Photodetectors. In: IEEE PHOTONICS TECHNOLOGY LETTERS, 31 (12). pp. 923-926.

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Official URL: https://doi.org/10.1109/LPT.2019.2913286


In this letter, we demonstrate 1 x 8 linear metal-semiconductor-metal arrays of UV-C photodetectors based on optical-float-zone grown bulk (100)-oriented beta-Ga2O3. The as-grown polished bulk samples exhibited an RMS roughness of 1.4 nm and the full-width at half-maxima of 0.19 degrees. The average peak responsivity (257 nm), dark current, photo-to-dark current ratio, and UV-to-visible rejection ratio of the devices in the array were measured to be 4 AW(-1), 0.23 nA, similar to 10(2), and similar to 10(3), respectively, at a bias of 40 V. The uniformity as well as the variability of the detector parameters across the devices in the array was investigated before and after wire bonding.

Item Type: Journal Article
Additional Information: copyright for this article belongs to IEEE PHOTONICS TECHNOLOGY LETTERS
Keywords: Optical float zone; solar-blind; beta-Ga2O3; UV photodetector; MSM; linear array
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 27 Jun 2019 14:57
Last Modified: 27 Jun 2019 14:57
URI: http://eprints.iisc.ac.in/id/eprint/63032

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