Singh, Vijay and Halappa, Pramod and Singh, N and Pathak, MS and Shivakumara, C and Natarajan, V (2019) EPR and Optical Properties of UV-B Radiation-Emitting Gd3+-Doped BaLa2ZnO5 Host Prepared by Sol-Gel Method. In: JOURNAL OF ELECTRONIC MATERIALS, 48 (6). pp. 3415-3422.
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Abstract
A series of trivalent gadolinium ion-doped BaLa2ZnO5 phosphors was prepared by the sol-gel technique. Phase purity and crystal structure were confirmed by the Rietveld refinement. The morphology of the sample was studied by scanning electron microscopy. The effect of Gd3+ concentration on the luminescence of the BaLa2-xGdxZnO5 (x=0.01x0.15) samples was investigated by photoluminescence spectra. Under excitation at 273nm, all the samples showed ultraviolet emission near 314nm, generated by the (P7/2S7/2)-P-6-S-8 transition of Gd3+ ions. It was found that the emission intensity increased with the concentration of Gd3+ ions up to 0.15mol without concentration quenching. The electron paramagnetic resonance spectra of the Gd3+ ion-doped BaLa2ZnO5 phosphors indicated that the dopant ions occupied slightly distorted La3+ sites in the host lattice. Both the PL and EPR studies describe the excited and ground-state features of Gd3+ ions in the BaLa2ZnO5 host lattice.
Item Type: | Journal Article |
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Publication: | JOURNAL OF ELECTRONIC MATERIALS |
Publisher: | SPRINGER |
Additional Information: | Copyright of this article belongs to SPRINGER |
Keywords: | Sol-gel; XRD; EPR; Gd3+ ions; BaLa2ZnO5; photoluminescence |
Department/Centre: | Division of Chemical Sciences > Solid State & Structural Chemistry Unit |
Date Deposited: | 23 May 2019 07:09 |
Last Modified: | 23 May 2019 07:09 |
URI: | http://eprints.iisc.ac.in/id/eprint/62711 |
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