Sharma, Amit and Mohan, S and Suwas, Satyam (2019) Evidence of adaptive modulation and magnetic field induced reorientation i of variants in epitaxially grown Ni-Mn-Ga thin film on Al2O3 (11(2)over-bar0) substrate. In: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 242 . pp. 6-16.
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Abstract
Epitaxial Ni-Mn-Ga thin films with a room temperature martensite phase were fabricated on single crystal Al2O3 (11 (2) over bar0) substrate using direct current (DC) magnetron sputtering. The X-ray pole figure measurements confirm the epitaxial relationship of Ni-Mn-Ga (101)(7M) parallel to Al2O3 (11 (2) over bar0) and Ni-Mn-Ga-7M parallel to Al2O3 (1 (1) over bar 01) between the film and substrate. Transmission electron microscopy reveals the presence of (220) micro-twins at an angle of 62.5 degrees and 56.3 degrees with respect to (202) growth plane. Coexistence of non-modulated martensite phase (a(NM) = 5.45 angstrom and c(NM) = 6.56 angstrom) and seven modulated martensite phases (a(14M) = 6.26 angstrom, b(14M )= 5.89 angstrom and c(14M) = 5.56 angstrom) has been observed in the film. The in-situ high-temperature X-ray diffraction indicates reversible thermal phase transformation in the film with a very low thermal hysteresis. The magnetic field induced reorientation (MIR) effect is displayed by the film.
Item Type: | Journal Article |
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Publication: | MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS |
Publisher: | ELSEVIER SCIENCE BV |
Additional Information: | Copyright of this article belongs to ELSEVIER SCIENCE BV |
Keywords: | Epitaxial thin films; Sputtering; Martensitic phase transformation; Adaptive martensite; Magnetic field induced reorientation |
Department/Centre: | Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 29 May 2019 06:48 |
Last Modified: | 29 May 2019 06:48 |
URI: | http://eprints.iisc.ac.in/id/eprint/62636 |
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