Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering

Balaji, S and Mohan, S and Muthu, DVS and Sood, AK (2003) Ultra thin films of nanocrystalline Ge studied by AFM and interference enhanced Raman scattering. In: Journal of Chemical Sciences, 115 (5-6). pp. 401-410.

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Abstract

Initial growth stages of the ultra thin films of germanium (Ge) prepared by ion beam sputter deposition have been studied using atomic force microscope (AFM) and interference enhanced Raman scattering. The growth of the films follows Volmer–Weber growth mechanism. Analysis of the AFM images shows that Ostwald ripening of the grains occurs as the thickness of the film increases. Raman spectra of the Ge films reveal phonon confinement along the growth direction and show that the misfit strain is relieved for film thickness greater than 4 nm.

Item Type:	Journal Article
Publication:	Journal of Chemical Sciences
Publisher:	Indian Academy of Sciences
Additional Information:	The Copyright belongs to Indian Academy of Sciences.
Keywords:	Ion beam sputtering;Ultra thin Ge films;Interference enhanced Raman spectroscopy;Phonon confinement;Atomic force microscopy
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics Division of Physical & Mathematical Sciences > Physics
Date Deposited:	12 Apr 2006
Last Modified:	19 Sep 2010 04:25
URI:	http://eprints.iisc.ac.in/id/eprint/6252

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