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Electrical Switching and Optical Bandgap Studies on Quaternary Ag-Doped Ge-Te-In Thin Films

Roy, Diptoshi and Varma, GSreevidya and Asokan, S and Das, Chandasree (2019) Electrical Switching and Optical Bandgap Studies on Quaternary Ag-Doped Ge-Te-In Thin Films. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 66 (4). pp. 1881-1886.

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Official URL: https://doi.org/10.1109/TED.2019.2898935


Amorphous Ge15Te80-xIn5Agx (6 <= x <= 24) thin films prepared in sandwich geometry exhibit memory switching behavior unlike the bulk sample that has shown both threshold switching for less current (1-2mA) andmemory switching for current greater than 2 mA. As anticipated, the threshold voltage of Ge(15)Te(80-x)In5Ag(x)(6 <= x <= 24) thin films is found to be lower as contrast to those of bulk counterparts. The compositional dependence of amorphous system shows an extensive plateau in the range of 6 <= x <= 12 which literally stands for the intermediate phase afterwhich there is a drastic increase in the threshold field. Shifted rigidity percolation threshold has also been confirmed fromthe compositional dependence of threshold field of amorphousGe(15)Te(80-x)In(5)Ag(x) thin films. In addition, the optical bandgap of a-Ge15Te80-xIn5Agx thin-film sample has been reckoned considering absorption spectra, and the compositional dependence has been described based on average bond energy of the system.

Item Type: Journal Article
Additional Information: Copyright of this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: Amorphous semiconductors; chalcogenides; electrical switching; optical band gap; vapor deposition
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 15 May 2019 13:26
Last Modified: 15 May 2019 13:26
URI: http://eprints.iisc.ac.in/id/eprint/62363

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