Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector

Chowdhury, AM and Chandan, G and Pant, R and Roul, B and Singh, DK and Nanda, KK and Krupanidhi, SB (2019) Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector. In: ACS Applied Materials and Interfaces, 11 (10). pp. 10418-10425.

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Abstract

A self-powered, broad band and ultrafast photodetector based on n + -InGaN/AlN/n-Si(111) heterostructure is demonstrated. Si-doped (n + type) InGaN epilayer was grown by plasma-assisted molecular beam epitaxy on a 100 nm thick AlN template on an n-type Si(111) substrate. The n + -InGaN/AlN/n-Si(111) devices exhibit excellent self-powered photoresponse under UV-visible (300-800 nm) light illumination. The maximum response of this self-powered photodetector is observed at 580 nm for low-intensity irradiance (0.1 mW/cm 2 ), owing to the deep donor states present near the InGaN/AlN interface. It shows a responsivity of 9.64 A/W with rise and fall times of 19.9 and 21.4 μs, respectively. A relation between the open circuit voltage and the responsivity has been realized. © 2019 American Chemical Society.

Item Type:	Journal Article
Publication:	ACS Applied Materials and Interfaces
Publisher:	American Chemical Society
Additional Information:	The copyright for this article belongs to the American Chemical Society.
Keywords:	Aluminum nitride; Gallium alloys; Gallium nitride; Heterojunctions; III-V semiconductors; Indium alloys; Indium compounds; Interface states; Molecular beam epitaxy; Molecular beams; Open circuit voltage; Photodetectors; Photons; Semiconductor alloys, Broad bands; Indium gallium nitride; InGaN epilayers; Light illumination; Photoresponses; Plasma assisted molecular beam epitaxy; Self-powered; Si(111) substrate, Nitrogen compounds
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	24 Apr 2019 05:23
Last Modified:	26 Aug 2022 03:48
URI:	https://eprints.iisc.ac.in/id/eprint/62144

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