ePrints@IIScePrints@IISc Home | About | Browse | Latest Additions | Advanced Search | Contact | Help

Morphology controlling of < 111 >-3C-SiC films by HMDS flow rate in LCVD

Xu, Qingfang and Tu, Rong and Sun, Qingyun and Yang, Meijun and Li, Qizhong and Zhang, Song and Zhang, Lianmeng and Goto, Takashi and Ohmori, Hitoshi and Shi, Ji and Li, Haiwen and Kosinova, Marina and Bikramjit, Basu (2019) Morphology controlling of < 111 >-3C-SiC films by HMDS flow rate in LCVD. In: RSC ADVANCES, 9 (5). pp. 2426-2430.

Rsc_Adv_9-5_2426_2019.pdf - Published Version

Download (3MB) | Preview
Official URL: https://doi.org/10.1039/c8ra09509d


Morphology of < 111 >-oriented 3C-SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD). The SiC whiskers were naturally sharp hexagonal pyramids with average height of 250 nm and an aspect ratio in the range of 5 to 10, with a density of 1.3 x 10(8) mm(-2). The influence mechanism of f on the surface morphology, as well as the growth mechanism of SiC whiskers, was discussed.

Item Type: Journal Article
Publication: RSC ADVANCES
Additional Information: Copyright of this article belongs to ROYAL SOC CHEMISTRY
Department/Centre: Division of Interdisciplinary Sciences > Centre for Biosystems Science and Engineering
Date Deposited: 20 Feb 2019 05:02
Last Modified: 20 Feb 2019 05:02
URI: http://eprints.iisc.ac.in/id/eprint/61770

Actions (login required)

View Item View Item