Lateral Dopant Diffusion Length Measurements Using Silicon Microring Resonators

Jeyaselvan, Vadivukkarasi and Selvaraja, Shankar Kumar (2018) Lateral Dopant Diffusion Length Measurements Using Silicon Microring Resonators. In: IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (24). pp. 2163-2166.

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Abstract

An electro-optic device in silicon such as a photodetector and a modulator requires doping to realize desired junctions. Doping Si is typically done using ion-implantation or the thermal diffusion process. Both processes rely on high-temperature anneal to either activate or drive the dopant into the bulk. As diffusion of dopants is a thermally driven process, knowledge of actual diffusion lengths is essential for efficient device designs. Unlike other methods, we present an integrated-silicon-photonic-device-based lateral diffusion length characterization technique. A silicon microring resonator is used as a test device for the demonstration in a silicon-on-insulator substrate. Lateral diffusion lengths of 0.35 and 0.69 mu m have been obtained for the drive-in temperatures of 950 degrees C and 1100 degrees C, respectively. We also present process simulation results to validate the experimental result.

Item Type:	Journal Article
Publication:	IEEE PHOTONICS TECHNOLOGY LETTERS
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Additional Information:	Copyright of this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords:	Ring resonator; lateral diffusion; electro-optics; diffusion doping
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	10 Feb 2019 05:57
Last Modified:	10 Feb 2019 05:57
URI:	http://eprints.iisc.ac.in/id/eprint/61349

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