Temperature dependent electrical properties of AlN/Si heterojunction

Mohan, Lokesh and Roul, Basanta and Krupanidhi, SB (2018) Temperature dependent electrical properties of AlN/Si heterojunction. In: JOURNAL OF APPLIED PHYSICS, 124 (20).

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Abstract

AlN is an integral part of many Si based electronic, optoelectronic, and electromechanical devices. The transport of charge carriers and their recombination at the AlN (0002)/Si (111) interface become crucial for the performance and reliability of such devices. In this work, we have studied the temperature dependent current-voltage (I-V-T) characteristics of AlN/Si heterojunctions to gain a deeper understanding. The analysis of the I-V-T characteristics interestingly suggested a temperature dependent turn-on voltage in the forward bias of the Schottky barrier. Also, the Schottky barrier itself was found to be temperature dependent as expected. We have qualitatively explained the temperature dependence of the turn-on voltage in terms of trap states at the AlN/Si heterojunction. Published by AIP Publishing.

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Publisher:	AMER INST PHYSICS
Additional Information:	Copyright of this article belongs to AMER INST PHYSICS
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	30 Dec 2018 13:35
Last Modified:	30 Dec 2018 13:35
URI:	http://eprints.iisc.ac.in/id/eprint/61293

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