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MBE-Grown beta-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio similar to 10(7)

Pratiyush, Anamika Singh and Xia, Zhanbo and Kumar, Sandeep and Zhang, Yuewei and Joishi, Chandan and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2018) MBE-Grown beta-Ga2O3-Based Schottky UV-C Photodetectors With Rectification Ratio similar to 10(7). In: IEEE PHOTONICS TECHNOLOGY LETTERS, 30 (23). pp. 2025-2028.

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Official URL: http://dx.doi.org/ 10.1109/LPT.2018.2874725


In this letter, we demonstrate high-performance vertical solar-blind Schottky photodetectors on MBE-grown homoepitaxial (010)-oriented beta-Ga2O3 films. The structure, consisting of (100 nm) beta-Ga2O3/(60 nm) n(++) beta-Ga2O3, was grown on a Fe-doped insulating (010) beta-Ga2O3 substrate. Ni/Au and indium were used as the Schottky and Ohmic contacts, respectively. The devices exhibited a rectification ratio of similar to 10(7) with turn-on voltage similar to 1 V and an ideality factor of 1.31. The extracted Schottky barrier height was 1.4 eV. The photodetectors showed low dark current of 0.3 nA at 5 V with a photo-todark current ratio of similar to 10(2) at 0 V. The devices exhibited a zero-bias responsivity of 4 mA/W at 254 nm corresponding to an external quantum efficiency similar to 3 %, with a UV-to-visible rejection ratio >10(3), showing true solar-blind operation. The transient response of the devices indicated rise/fall times of similar to 100 ms. Temperature-dependent current-voltage characteristics agree with the thermionic emission model.

Item Type: Journal Article
Additional Information: Copyright for this article belongs to IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords: MBE; solar-blind; beta-Ga2O3; UV photodetector; vertical Schottky
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 11 Dec 2018 12:11
Last Modified: 11 Dec 2018 12:11
URI: http://eprints.iisc.ac.in/id/eprint/61217

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