Electrical switching studies of ternary Si15Te85-xBix (0 <= x <= 2) chalcogenide glasses

Fernandes, Brian Jeevan and Munga, Pumlian and Ramesh, K and Udayashankar, NK (2018) Electrical switching studies of ternary Si15Te85-xBix (0 <= x <= 2) chalcogenide glasses. In: International Conference on Smart Engineering Materials (ICSEM), OCT 20-22, 2016, Bangalore, INDIA, pp. 21292-21298.

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Abstract

Bulk semiconducting Si15Te85-xBix(0 <= x <= 2) chalcogenide glasses have been prepared using a well established melt-quenching technique. Electrical switching studies have been undertaken on Si15Te85-xBix(0 <= x <= 2) chalcogenide glasses. The results indicate that these samples exhibit memory type electrical switching behavior. It has been observed that the switching voltage (V-T) of the glasses decreases with the addition of Bi. In addition, OFF state resistivity of the samples have been found to decrease with the increase in Bi concentration and are related to the observed decrease in switching voltages. The switching voltage (V-T) has been found to increase with the thickness of the sample and decrease with increase in temperature confirming the thermal origin of the memory switching process. Further, scanning electron microscopy (SEM) studies reveal the formation of a crystalline channel indicating the conducting path between the two electrodes in the switched region. (C) 2018 Elsevier Ltd. All rights reserved.

Item Type:	Conference Proceedings
Publication:	MATERIALS TODAY-PROCEEDINGS
Publisher:	ELSEVIER SCIENCE BV
Additional Information:	Copy right for this article belong to ELSEVIER SCIENCE BV
Keywords:	chalcogenide glasses; electrical switching; OFF state resistivity; scanning electron microscopy(SEM)
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	24 Nov 2018 14:28
Last Modified:	24 Nov 2018 14:28
URI:	http://eprints.iisc.ac.in/id/eprint/61152

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