Atomic layer chemical vapour deposition of copper

Mane, Anil U and Shivashankar, SA (2004) Atomic layer chemical vapour deposition of copper. In: Materials Science in Semiconductor Processing, 7 (4-6). pp. 343-347.

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Abstract

Copper films with (1 1 1) texture are of crucial importance in integrated circuit interconnects. We have deposited strongly (1 1 1)-textured thin .lms of copper by atomic layer deposition (ALD) using [2,2,6,6-tetramethyl-3,5- heptadionato] Cu(II), $Cu(thd)_2$, as the precursor. The dependence of the microstructure of the films on ALD conditions, such as the number of ALD cycles and the deposition temperature was studied by X-ray diffraction, scanning electron microscopy (SEM), and transmission electron microscopy. Analysis of (1 1 1)-textured .lms shows the presence of twin planes in the copper grains throughout the films. SEM shows a labyrinthine structure of highly connected, large grains developing as film thickness increases. This leads to low resistivity and suggests high resistance to electromigration.

Item Type:	Journal Article
Publication:	Materials Science in Semiconductor Processing
Publisher:	Elsevier
Additional Information:	The copyright of this article belongs to Elsevier.
Keywords:	Copper;(1 1 1) texture;ALD;Cu(thd)2;TEM;Morphology
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	23 Mar 2006
Last Modified:	19 Sep 2010 04:24
URI:	http://eprints.iisc.ac.in/id/eprint/6103

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