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Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO3/Fe3O4 Heterostructure

Zhong, Gaokuo and An, Feng and Bitla, Yugandhar and Wang, Jinbin and Zhong, Xiangli and Yu, Junxi and Gao, Wenpei and Zhang, Yi and Tang, Congbing and Ou, Yun and Jiang, Jie and Hsieh, Ying-Hui and Pan, Xiaoqing and Xie, Shuhong and Chu, Ying-Hao and Li, Jiangyu (2018) Deterministic, Reversible, and Nonvolatile Low-Voltage Writing of Magnetic Domains in Epitaxial BaTiO3/Fe3O4 Heterostructure. In: ACS NANO, 12 (9). pp. 9558-9567.

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Official URL: http://dx.doi.org/10.1021/acsnano.8b05284


The ability to electrically write magnetic bits is highly desirable for future magnetic memories and spintronic devices, though fully deterministic, reversible, and nonvolatile switching of magnetic moments by electric field remains elusive despite extensive research. In this work, we develop a concept to electrically switch magnetization via polarization modulated oxygen vacancies, and we demonstrate the idea in a multiferroic epitaxial heterostructure of BaTiO3/Fe3O4 fabricated by pulsed laser deposition. The piezoelectricity and ferroelectricity of BaTiO3 have been confirmed by macro- and microscale measurements, for which Fe(3)O(4 )serves as the top electrode for switching the polarization. X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra indicate a mixture of Fe2+ and Fe3+ at O-h sites and Fe3+ at T-d sites in Fe3O4, while the room-temperature magnetic domains of Fe3O4 are revealed by microscopic magnetic force microscopy measurements. It is demonstrated that the magnetic domains of Fe(3)O(4 )can be switched by not only magnetic fields but also electric fields in a deterministic, reversible, and nonvolatile manner, wherein polarization reversal by electric field modulates the oxygen vacancy distribution in Fe3O4, and thus its magnetic state, making it attractive for electrically written magnetic memories.

Item Type: Journal Article
Publication: ACS NANO
Additional Information: Copy right for this article belong to AMER CHEMICAL SOC
Keywords: multiferroic heterostructure; magnetoelectric coupling; Fe3O4; low-voltage writing; oxygen vacancies
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 17 Oct 2018 14:14
Last Modified: 17 Oct 2018 14:14
URI: http://eprints.iisc.ac.in/id/eprint/60904

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