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Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

Garlapati, Suresh Kumar and Divya, Mitta and Breitung, Ben and Kruk, Robert and Hahn, Horst and Dasgupta, Subho (2018) Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices. In: ADVANCED MATERIALS, 30 (40).

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Official URL: http://dx.doi.org/10.1002/adma.201707600


Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.

Item Type: Journal Article
Additional Information: Copy right for this article belong to WILEY-V C H VERLAG GMBH
Keywords: field-effect transistors; gating mechanisms; inorganic semiconductors; logic electronics; printed electronics
Department/Centre: Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited: 15 Oct 2018 15:24
Last Modified: 15 Oct 2018 15:24
URI: http://eprints.iisc.ac.in/id/eprint/60879

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