Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector

Goel, Neeraj and Kumar, Rahul and Roul, Basanta and Kumar, Mahesh and Krupanidhi, S B (2018) Wafer-scale synthesis of a uniform film of few-layer MoS2 on GaN for 2D heterojunction ultraviolet photodetector. In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, 51 (37).

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Abstract

Layered transition metal dichalcogenide materials grown over a conventional 3D semiconductor substrate have ignited a spark of interest in the electronics industry. The integration of these 2D layered materials extensively addresses the formidable challenges faced by a new generation of opto-electronic and photovoltaic devices. Herein, we have demonstrated a 2D/3D heterojunction type photodetector by depositing MoS2 on a GaN substrate with a mass-scalable sputtering method. Spectroscopic and microscopic characterizations expose the signature of the highly crystalline, homogeneous and controlled growth of a deposited few-layer MoS2 film. The greater light absorption of few-layer MoS2 results in the high performance of the MoS2/GaN photodetector. Our device shows high external spectral responsivity (similar to 10(3) A W-1) and detectivity (similar to 10(11) Jones) with a very fast response time (similar to 5ms). Our obtained results are significantly better than previous MoS2- and GaN-based photodetectors. This work unveils a new perspective in MoS2/GaN heterojunctions for high-performance optoelectronic applications.

Item Type:	Journal Article
Publication:	JOURNAL OF PHYSICS D-APPLIED PHYSICS
Publisher:	IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Additional Information:	Copy right for this article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	27 Aug 2018 14:57
Last Modified:	25 Aug 2022 05:50
URI:	https://eprints.iisc.ac.in/id/eprint/60503

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