Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films: Structural stability and related electrical transport properties

Bhat, Shwetha G and Gauquelin, N and Sebastian, Nirmal K and Sil, Anomitra and Beche, A and Verbeeck, J and Samal, D and Kumar, P S Anil (2018) Orthorhombic vs. hexagonal epitaxial SrIrO3 thin films: Structural stability and related electrical transport properties. In: EPL, 122 (2).

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Abstract

Metastable orthorhombic SrIrO3 (SIO) is an arch-type spin-orbit coupled material. We demonstrate here a controlled growth of relatively thick (200 nm) SIO films that transform from bulk ``6H-type'' structure with monoclinic distortion to an orthorhombic lattice by controlling growth temperature. Extensive studies based on high-resolution X-ray diffraction and transmission electron microscopy infer a two distinct structural phases of SIO. Electrical transport reveals a weak temperature-dependent semi-metallic character for both phases. However, the temperature-dependent Hall-coefficient for the orthorhombic SIO exhibits a prominent sign change, suggesting a multiband character in the vicinity of E-F. Our findings thus unravel the subtle structure-property relation in SIO epitaxial thin films. Copyright (C) EPLA, 2018

Item Type:	Journal Article
Publication:	EPL
Publisher:	IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Additional Information:	Copyright of this article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	04 Jul 2018 14:42
Last Modified:	04 Jul 2018 14:42
URI:	http://eprints.iisc.ac.in/id/eprint/60152

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