Rana, Vaibhav and Bhat, KN and Das, Samaresh and Saxena, Kshitij and Dhanekar, Saakshi and Singh, Pushpapraj (2017) Low-cost and reliable nanowire fabrication method for ultrasensitive pressure sensor. In: 16th IEEE SENSORS CONFERENCE, OCT 29-NOV 01, 2017, Glasgow, SCOTLAND, pp. 211-213.
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Abstract
This paper presents piezoresistive nanowires based pressure sensor with a novel and low-cost nanowire fabrication technique. Silicon nanowire sensing element (width<100 nm) is chosen because of their higher piezoresistive coefficient compared to bulk silicon and integrated into MEMS diaphragm to measure pressure up to 2 bar. The novelty of the proposed process lies in making nanowires with controllable dimensions (CD < 100 nm) and with no dependency on the lithography tool limitations. Initially, this process is optimised for nanowires and then simulations are carried out for the pressure sensor. Simulation results are presented for a pressure sensor having a diaphragm thickness of 10 mu m and the sensor fabrication is currently ongoing. Proposed nanowire fabrication process can potentially be utilized to obtain any nano-dimension structure without using expensive masks and special lithography tools.
Item Type: | Conference Proceedings |
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Series.: | IEEE Sensors |
Publisher: | IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA |
Additional Information: | Copy right for this article belong to IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA |
Department/Centre: | Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering |
Date Deposited: | 07 May 2018 19:00 |
Last Modified: | 25 Feb 2019 11:18 |
URI: | http://eprints.iisc.ac.in/id/eprint/59796 |
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