Chemically stabilized epitaxial wurtzite-BN thin film

Vishal, Badri and Singh, Rajendra and Chaturvedi, Abhishek and Sharma, Ankit and Sreedhara, M B and Sahu, Rajib and Bhat, Usha and Ramamurty, Upadrasta and Datta, Ranjan (2018) Chemically stabilized epitaxial wurtzite-BN thin film. In: SUPERLATTICES AND MICROSTRUCTURES, 115 . pp. 197-203.

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Abstract

We report on the chemically stabilized epitaxial w-BN thin film grown on c-plane sapphire by pulsed laser deposition under slow kinetic condition. Traces of no other allotropes such as cubic (c) or hexagonal (h) BN phases are present. Sapphire substrate plays a significant role in stabilizing the metastable w-BN from h-BN target under unusual PLD growth condition involving low temperature and pressure and is explained based on density functional theory calculation. The hardness and the elastic modulus of the w-BN film are 37 & 339 GPa, respectively measured by indentation along <0001> direction. The results are extremely promising in advancing the microelectronic and mechanical tooling industry. (C) 2018 Elsevier Ltd. All rights reserved.

Item Type:	Journal Article
Publication:	SUPERLATTICES AND MICROSTRUCTURES
Publisher:	ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 24-28 OVAL RD, LONDON NW1 7DX, ENGLAND
Additional Information:	Copy right for this article belong to ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 24-28 OVAL RD, LONDON NW1 7DX, ENGLAND =
Department/Centre:	Division of Mechanical Sciences > Materials Engineering (formerly Metallurgy)
Date Deposited:	07 May 2018 19:01
Last Modified:	07 May 2018 19:01
URI:	http://eprints.iisc.ac.in/id/eprint/59771

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