Scalability assessment of Group-IV mono-chalcogenide based tunnel FET

Brahma, Madhuchhanda and Kabiraj, Arnab and Saha, Dipankar and Mahapatra, Santanu (2018) Scalability assessment of Group-IV mono-chalcogenide based tunnel FET. In: SCIENTIFIC REPORTS, 8 .

PDF Sci_Rep_8_5993_2018.pdf - Published Version Restricted to Registered users only Download (2MB) | Request a copy

Abstract

Selection of appropriate channel material is the key to design high performance tunnel field effect transistor (TFET), which promises to outperform the conventional metal oxide semiconductor field effect transistor (MOSFET) in ultra-low energy switching applications. Recently discovered atomically thin GeSe, a group IV mono-chalcogenide, can be a potential candidate owing to its direct electronic band gap and low carrier effective mass. In this work we employ ballistic quantum transport model to assess the intrinsic performance limit of monolayer GeSe-TFET. We first study the electronic band structure by regular and hybrid density functional theory and develop two band k center dot p hamiltonian for the material. We find that the complex band wraps itself within the conduction band and valence band edges and thus signifies efficient band to band tunneling mechanism. We then use the k center dot p hamiltonian to calculate self-consistent solution of the transport equations within the non-equilibrium Green's function formalism and the Poisson's equation based electrostatic potential. Keeping the OFF-current fixed at 10 pA/mu m we investigate different static and dynamic performance metrics (ON current, energy and delay) under three different constant-field scaling rules: 40, 30 and 20 nm/V. Our study shows that monolayer GeSe-TFET is scalable till 8 nm while preserving ON/OFF current ratio higher than 10(4).

Item Type:	Journal Article
Publication:	SCIENTIFIC REPORTS
Publisher:	NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Additional Information:	Copy right for this article belong to NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	04 May 2018 18:49
Last Modified:	04 May 2018 18:49
URI:	http://eprints.iisc.ac.in/id/eprint/59712

Actions (login required)

View Item