Probing in-plane anisotropy in few-layer ReS2 using low frequency noise measurement

Mitra, Richa and Jariwala, Bhakti and Bhattacharya, Arnab and Das, Anindya (2018) Probing in-plane anisotropy in few-layer ReS2 using low frequency noise measurement. In: NANOTECHNOLOGY, 29 (14).

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Abstract

ReS2, a layered two-dimensional material popular for its in-plane anisotropic properties, is emerging as one of the potential candidates for flexible electronics and ultrafast optical applications. It is an n-type semiconducting material having a layer independent bandgap of 1.55 eV. In this paper we have characterized the intrinsic electronic noise level of few-layer ReS2 for the first time. Few-layer ReS2 field effect transistor devices show a 1/f nature of noise for frequency ranging over three orders of magnitude. We have also observed that not only the electrical response of the material is anisotropic; the noise level is also dependent on direction. In fact the noise is found to be more sensitive towards the anisotropy. This fact has been explained by evoking the theory where the Hooge parameter is not a constant quantity, but has a distinct power law dependence on mobility along the two-axes direction. The anisotropy in 1/f noise measurement will pave the way to quantify the anisotropic nature of two-dimensional (2D) materials, which will be helpful for the design of low-noise transistors in future.

Item Type:	Journal Article
Publication:	NANOTECHNOLOGY
Publisher:	http://dx.doi.org/10.1088/1361-6528/aaac03
Additional Information:	Copy right for the article belong to IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Mar 2018 17:40
Last Modified:	14 Mar 2018 17:40
URI:	http://eprints.iisc.ac.in/id/eprint/59152

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