Electrical switching in Si20Te80 - Bi-x(x) (0 <= x <= 3) chalcogenide glassy alloys

Fernandes, Brian Jeevan and Ramesh, K and Udayashankar, N K (2018) Electrical switching in Si20Te80 - Bi-x(x) (0 <= x <= 3) chalcogenide glassy alloys. In: JOURNAL OF NON-CRYSTALLINE SOLIDS, 483 . pp. 86-93.

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Abstract

Chalcogenide glasses have attained enormous research interest due to their importance in finding electronic memories. Here we report electrical switching and thermal crystallization behavior of Si20Te80 (-) (x)Bix (0 <= x <= 3) glasses. We observe a significant decrease in the threshold voltage (V-T) and the thermal stability (Delta T), indicating that in Si20Te80 (-) Bi-X(X) glasses, the resistivity of the additive element Bi plays a dominant role over network connectivity/rigidity. The variation of V-T with respect to thickness and temperature of the sample indicates that the memory switching observed in Si20Te80 -XBiX glasses is influenced by the thermally induced transitions (thermal mechanism). Scanning electron microscopy (SEM) studies on pre-switched and post switched samples reveal the morphological changes on the surface of the sample, and serve as an experimental evidence for the formation of the crystalline filament between two electrodes during switching. Furthermore, the decrease in Delta T values indicates that the Si-Te glasses become de-vitrifiable more easily with the addition of Bi, influencing the decrease of V-T. Structural evaluation like thermal devitrification studies and morphological changes elucidate the restricted glass formability of the studied glass system.

Item Type:	Journal Article
Publication:	JOURNAL OF NON-CRYSTALLINE SOLIDS
Publisher:	ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Additional Information:	Copy right for the article belong to ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	02 Mar 2018 14:50
Last Modified:	02 Mar 2018 14:50
URI:	http://eprints.iisc.ac.in/id/eprint/59070

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