Pressure-induced Lifshitz transition in NbP: Raman, x-ray diffraction, electrical transport, and density functional theory

Gupta, Satyendra Nath and Singh, Anjali and Pal, Koushik and Muthu, D V S and Shekhar, C and Qi, Yanpeng and Naumov, Pavel G and Medvedev, Sergey A and Felser, C and Waghmare, U V and Sood, A K (2018) Pressure-induced Lifshitz transition in NbP: Raman, x-ray diffraction, electrical transport, and density functional theory. In: PHYSICAL REVIEW B, 97 (6).

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Abstract

We report high-pressure Raman, synchrotron x-ray diffraction, and electrical transport studies on Weyl semimetals NbP and TaP along with first-principles density functional theoretical (DFT) analysis. The frequencies of first-order Raman modes of NbP harden with increasing pressure and exhibit a slope change at P-c similar to 9GPa. The pressure-dependent resistivity exhibits a minimum at P-c. The temperature coefficient of resistivity below Pc is positive as expected for semimetals but changes significantly in the high-pressure phase. Using DFT calculations, we show that these anomalies are associated with a pressure-induced Lifshitz transition, which involves the appearance of electron and hole pockets in its electronic structure. In contrast, the results of Raman and synchrotron x-ray diffraction experiments on TaP and DFT calculations show that TaP is quite robust under pressure and does not undergo any phase transition.

Item Type:	Journal Article
Publication:	PHYSICAL REVIEW B
Additional Information:	Copy right for this article belong to the AMER PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	02 Mar 2018 14:56
Last Modified:	02 Mar 2018 14:56
URI:	http://eprints.iisc.ac.in/id/eprint/59041

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