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DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment

Kumar, Arvind and Mondal, Sandip and Rao, KSR Koteswara (2018) DLTS Analysis and Interface Engineering of Solution Route Fabricated Zirconia Based MIS Devices Using Plasma Treatment. In: JOURNAL OF ELECTRONIC MATERIALS, 47 (2). pp. 955-960.

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Official URL: http://dx.doi.org/10.1007/s11664-017-5938-2


In this work, we have fabricated low-temperature sol-gel spin-coated and oxygen (O-2) plasma treated ZrO2 thin film-based metal-insulator-semiconductor devices. To understand the impact of plasma treatment on the Si/ZrO2 interface, deep level transient spectroscopy measurements were performed. It is reported that the interface state density (D (it)) comes down to 7.1 x 10(10) eV(-1) cm(-2) from 4 x 10(11) eV(-1) cm(-2), after plasma treatment. The reduction in D (it) is around five times and can be attributed to the passivation of oxygen vacancies near the Si/ZrO2 interface, as they try to relocate near the interface. The energy level position (E (T)) of interfacial traps is estimated to be 0.36 eV below the conduction band edge. The untreated ZrO2 film displayed poor leakage behavior due to the presence of several traps within the film and at the interface; O-2 plasma treated films show improved leakage current density as they have been reduced from 5.4 x 10(-8) A/cm(2) to 1.98 x 10(-9) A/cm(2) for gate injection mode and 6.4 x 10(-8) A/cm(2) to 6.3 x 10(-10) A/cm(2) for substrate injection mode at 1 V. Hence, we suggest that plasma treatment might be useful in future device fabrication technology.

Item Type: Journal Article
Publisher: 10.1007/s11664-017-5938-2
Additional Information: 59th Electronic Materials Conference (EMC), Univ Notre Dame, South Bend, IN, JUN 28-30, 2017 Copy right for this article belongs to the SPRINGER, 233 SPRING ST, NEW YORK, NY 10013 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 02 Mar 2018 15:07
Last Modified: 02 Mar 2018 15:07
URI: http://eprints.iisc.ac.in/id/eprint/58874

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