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Synthesis and electronic properties of Ruddlesden-Popper strontium iridate epitaxial thin films stabilized by control of growth kinetics

Liu, Xiaoran and Cao, Yanwei and Pal, B and Middey, S and Kareev, M and Choi, Y and Shafer, P and Haskel, D and Arenholz, E and Chakhalian, J (2017) Synthesis and electronic properties of Ruddlesden-Popper strontium iridate epitaxial thin films stabilized by control of growth kinetics. In: PHYSICAL REVIEW MATERIALS, 1 (7).

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Official URL: http://dx.doi.org/10.1103/PhysRevMaterials.1.07500...

Abstract

We report on the selective fabrication of high-quality Sr2IrO4 and SrIrO3 epitaxial thin films from a single polycrystalline Sr2IrO4 target by pulsed laser deposition. Using a combination of x-ray diffraction and photoemission spectroscopy characterizations, we discover that within a relatively narrow range of substrate temperature, the oxygen partial pressure plays a critical role in the cation stoichiometric ratio of the films, and triggers the stabilization of different Ruddlesden-Popper (RP) phases. Resonant x-ray absorption spectroscopy measurements taken at the Ir L edge and the O K edge demonstrate the presence of strong spin-orbit coupling, and reveal the electronic and orbital structures of both compounds. These results suggest that in addition to the conventional thermodynamics consideration, higher members of the Srn+1IrnO3n+1 series can possibly be achieved by kinetic control away from the thermodynamic limit. These findings offer an approach to the synthesis of ultrathin films of the RP series of iridates and can be extended to other complex oxides with layered structure.

Item Type: Journal Article
Publication: PHYSICAL REVIEW MATERIALS
Publisher: 10.1103/PhysRevMaterials.1.075004
Additional Information: Copy right for this article belongs to the AMER PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 20 Jan 2018 06:22
Last Modified: 20 Jan 2018 06:22
URI: http://eprints.iisc.ac.in/id/eprint/58825

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