Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation

Kumar, B Sampath and Shrivastava, Mayank (2018) Part II: RF, ESD, HCI, SOA, and Self Heating Concerns in LDMOS Devices Versus Quasi-Saturation. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 65 (1). pp. 199-206.

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Abstract

Various LDMOS device design parameters to mitigate quasi-saturation (QS) have been identified. Based on this, a set of independent and mixed device designs to mitigate QS, while maximizing the device performance, are presented. The impact of QS on the analog/RF/switching performance of these independent and mixed designs is investigated thoroughly, while analogizing performance with QS for the first time. Furthermore, hot carrier induced (HCI) degradation in various independent and mixed LDMOS designs is studied using spherical harmonic expansion of Boltzmann transport equation. In addition to this self-heating behavior, safe operating area (SOA) boundaries and electrostatic discharge (ESD) behavior of independent and mixed LDMOS designs with and without QS are studied. For the first time, HCI degradation, self-heating behavior, SOA boundary, and ESD failure in LDMOS devices are correlated with the extent of QS in LDMOS devices, based on which device design guidelines to tackle all performance versus reliability challenges are derived.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	10.1109/TED.2017.2732504
Additional Information:	Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	20 Jan 2018 06:38
Last Modified:	20 Jan 2018 06:38
URI:	http://eprints.iisc.ac.in/id/eprint/58812

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