Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells

Naik, Gopalakrishna K and Rao, KSRK and Srinivasan, T and Muralidharan, R and Mehta, SK (2004) Photoluminescence study of biexciton luminescence on the naturally occurring quantum dots in undoped InGaAs/GaAs quantum wells. In: Physica B: Condensed Matter, 353 (3-4). pp. 205-209.

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Abstract

We report on a photoluminescence study of excitons and biexcitons localized at naturally occurring quantum dots formed due to monolayer well width fluctuations in undoped InGaAs/GaAs quantum wells by macrophotoluminescence measurement. Pseudomorphic InGaAs/GaAs quantum well heterostructures with low indium composition (0.1) were grown by molecular beam epitaxy. At certain positions on the samples, evolution of the spectral features as function of excitation powers shows the formation of biexcitons and their binding energy was found to be about 3 meV.

Item Type:	Journal Article
Publication:	Physica B: Condensed Matter
Publisher:	Elsevier.
Additional Information:	The copyright of this article belongs to Elsevier.
Keywords:	InGaAs;Photoluminescence;Bi-excitons;QDs
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	23 Mar 2006
Last Modified:	19 Sep 2010 04:24
URI:	http://eprints.iisc.ac.in/id/eprint/5871

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