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Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal

Nair, Aswathi and Bhattacharya, Prasenjit and Sambandan, Sanjiv (2017) Modulating Thin Film Transistor Characteristics by Texturing the Gate Metal. In: SCIENTIFIC REPORTS, 7 .

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Official URL: http://dx.doi.org/10.1038/s41598-017-18111-5


The development of reliable, high performance integrated circuits based on thin film transistors (TFTs) is of interest for the development of flexible electronic circuits. In this work we illustrate the modulation of TFT transconductance via the texturing of the gate metal created by the addition of a conductive pattern on top of a planar gate. Texturing results in the semiconductor-insulator interface acquiring a non-planar geometry with local variations in the radius of curvature. This influences various TFT parameters such as the subthreshold slope, gate voltage at the onset of conduction, contact resistance and gate capacitance. Specific studies are performed on textures based on periodic striations oriented along different directions. Textured TFTs showed upto +/- 40% variation in transconductance depending on the texture orientation as compared to conventional planar gate TFTs. Analytical models are developed and compared with experiments. Gain boosting in common source amplifiers based on textured TFTs as compared to conventional TFTs is demonstrated.

Item Type: Journal Article
Publisher: 10.1038/s41598-017-18111-5
Additional Information: Copy right for this article belongs to the NATURE PUBLISHING GROUP, MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 12 Jan 2018 09:06
Last Modified: 12 Jan 2018 09:06
URI: http://eprints.iisc.ac.in/id/eprint/58683

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