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Substrate effects in high gain, low operating voltage SnSe2 photoconductor

Krishna, Murali and Kallatt, Sangeeth and Majumdar, Kausik (2018) Substrate effects in high gain, low operating voltage SnSe2 photoconductor. In: NANOTECHNOLOGY, 29 (3).

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Official URL: http://dx.doi.org/10.1088/1361-6528/aa9b18


High gain photoconductive devices find wide spread applications in low intensity light detection. Ultra-thin layered materials have recently drawn a lot of attention from researchers in this regard. However, in general, a large operating voltage is required to obtain large responsivity in these devices. In addition, the characteristics are often confounded by substrate induced trap effects. Here we report multi-layer SnSe2 based photoconductive devices using two different structures: (1) SiO2 substrate supported inter-digitated electrode (IDE), and (2) suspended channel. The IDE device exhibits a responsivity of approximate to 10(3) A W-1 and approximate to 8.66 x 10(4) A W-1 at operating voltages of 1 mV and 100 mV, respectively-a superior low voltage performance over existing literature on planar 2D structures. However, the responsivity reduces by more than two orders of magnitude, while the transient response improves for the suspended device-providing insights into the critical role played by the channel-substrate interface in the gain mechanism. The results, on one hand, are promising for highly sensitive photoconductive applications consuming ultra-low power, and on the other hand, show a generic methodology that could be applied to other layered material based photoconductive devices as well for extracting the intrinsic behavior.

Item Type: Journal Article
Publisher: 10.1088/1361-6528/aa9b18
Additional Information: Copy right for this article belongs to the IOP PUBLISHING LTD, TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Department/Centre: Division of Electrical Sciences > Electrical Communication Engineering
Date Deposited: 12 Jan 2018 09:30
Last Modified: 12 Jan 2018 09:30
URI: http://eprints.iisc.ac.in/id/eprint/58653

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