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Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer

Kumar, Sandeep and Gupta, Priti and Guiney, Ivor and Humphreys, Colin J and Raghavan, Srinivasan and Muralidharan, R and Nath, Digbijoy N (2017) Temperature and Bias Dependent Trap Capture Cross Section in AlGaN/GaN HEMT on 6-in Silicon With Carbon-Doped Buffer. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (12). pp. 4868-4874.

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Official URL: http://dx.doi.org/10.1109/TED.2017.2757516


We report on the estimation of trap capture cross section in AlGaN/GaN HEMTs as a function of bias and temperature. Conductance dispersion technique was employed to study the AlGaN/GaN interface of the devices with a carbon-doped GaN buffer grown on 6-in silicon. While a negligible shift in the threshold voltage (VTH) was observed in temperature-dependent IDS-VGS sweeps, we observed a spread in the capacitance-voltage (C-V) measurements, indicating a contribution of interface traps. When biased near depletion, G/omega versus frequency plot for AlGaN/GaN interface exhibits two peaks which correspond to a pair of trap density (D-it) and trap time constant (T-it) values. This was explained using a circuit model in conjunction with energy band diagram. The D-it and T-it values for one peak were in the range from similar to 0.3-7 x 10(12)/eV.cm(2) and 0.6-10 mu s while for the other peak, D-it-T-it were in the range of similar to 0.1-35 x 10(12)/eV.cm(2) and similar to 0.06-0.3 mu s at 25 degrees C. From the T-it values, electron capture cross section (sigma) for both the traps was extracted and was found to be decreasing with increasing temperature in the range of 1.1 x 10(-20)-1 x 10(-19) cm(2) and 4.5 x 10(-20)-1 x 10(-17) cm(2) for slowtraps and fast traps, respectively. A multiphonon emission effect was invoked to explain the temperature dependence of capture cross section.

Item Type: Journal Article
Publisher: 10.1109/TED.2017.2757516
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 13 Jan 2018 06:45
Last Modified: 13 Jan 2018 06:45
URI: http://eprints.iisc.ac.in/id/eprint/58592

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