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Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene

Mahapatra, Phanibhusan S and Sarkar, Kingshuk and Krishnamurthy, HR and Mukerjee, Subroto and Ghosh, Arindam (2017) Seebeck Coefficient of a Single van der Waals Junction in Twisted Bilayer Graphene. In: NANO LETTERS, 17 (11). pp. 6822-6827.

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Official URL: http://dx.doi.org/10.1021/acs.nanolett.7b03097


When two planar atomic membranes are placed within the van der Waals distance, the charge and heat transport across the interface are coupled by the rules of momentum conservation and structural commensurability, leading to outstanding thermoelectric properties. Here we show that an effective ``interlayer phonon drag'' determines the Seebeck coecient (S) across the van der Waals gap formed in twisted bilayer graphene (tBLG). The cross-plane thermovoltage, which is nonmonotonic in both temperature and density, is generated through scattering of electrons by the out-of-plane layer breathing (ZO'/ZA(2)) phonon modes and differs dramatically from the expected Landauer-Buttiker formalism in conventional tunnel junctions. The tunability of the cross-plane Seebeck effect in van der Waals junctions may be valuable in creating a new genre of versatile thermoelectric systems with layered solids.

Item Type: Journal Article
Publication: NANO LETTERS
Additional Information: Copy right for this article belongs to the AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Department/Centre: Division of Physical & Mathematical Sciences > Physics
Date Deposited: 27 Dec 2017 10:12
Last Modified: 27 Dec 2017 10:12
URI: http://eprints.iisc.ac.in/id/eprint/58552

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