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Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers

Schmidt, Dirk Oliver and Raab, Nicolas and Noyong, Michael and Santhanam, Venugopal and Dittmann, Regina and Simon, Ulrich (2017) Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers. In: NANOMATERIALS, 7 (11).

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Official URL: http://dx.doi.org/10.3390/nano7110370


Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub-10 nm TiO2 NPs that were self-assembled into monolayers and transferred onto metallic substrates. We electrically characterized these monolayers in regard to their RS properties by means of a nanorobotics system in a scanning electron microscope, and found features typical of bipolar resistive switching.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the MDPI AG, ST ALBAN-ANLAGE 66, CH-4052 BASEL, SWITZERLAND
Department/Centre: Division of Mechanical Sciences > Chemical Engineering
Date Deposited: 23 Dec 2017 08:30
Last Modified: 23 Dec 2017 08:30
URI: http://eprints.iisc.ac.in/id/eprint/58522

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