Deepak, K and Roy, Amit and Anjaneyulu, P and Kandaiah, Sakthivel and Pinjare, Sampatrao L. (2017) Charge transport mechanism in p-type copper ion containing triazine thiolate metallopolymer thin film devices. In: JOURNAL OF APPLIED PHYSICS, 122 (16).
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Abstract
The charge transport mechanism in copper ions containing 1,3,5-Triazine-2,4,6-trithiolate (CuTCA) based polymer device in sandwich (Ag/CuTCA/Cu) geometry is studied. The current-voltage (I-V) characteristics of the metallopolymer CuTCA device have shown a transition in the charge transport mechanism from Ohmic to Space-charge limited conduction when temperature and voltage are varied. The carriers in CuTCA devices exhibit hopping transport, in which carriers hop from one site to the other. The hole mobility in this polymer device is found to be dependent on electric field E (mu(p) alpha root E) and temperature, which suggests that the polymer has inherent disorder. The electric-field coefficient gamma and zero-field mobility mu(0) are temperature dependent. The values of mobility and activation energies are estimated from temperature (90-140 K) dependent charge transport studies and found to be in the range of 1 x 10(-11) -8 x 10(-12) m(2) /(V s) and 16.5 meV, respectively. Temperature dependent electric-field coefficient gamma is in the order of 17.8 x 10(-4) (m/V)(1/2), and the value of zero-field mobility mu(0) is in the order of 1.2 x 10(-11) m(2) /(V s) at 140 K. A constant phase element (Q) is used to model the device parameters, which are extracted using the Impedance spectroscopy technique. The bandgap of the polymer is estimated to be 2.6 eV from UV-Vis reflectance spectra. Published by AIP Publishing.
Item Type: | Journal Article |
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Publication: | JOURNAL OF APPLIED PHYSICS |
Additional Information: | Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA |
Department/Centre: | Division of Physical & Mathematical Sciences > Physics |
Date Deposited: | 26 Dec 2017 05:41 |
Last Modified: | 26 Dec 2017 05:41 |
URI: | http://eprints.iisc.ac.in/id/eprint/58454 |
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