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Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors

Patil, Rhishikesh Mahadev and Nagapure, Dipak Ramdas and Mary, Swapna G and Chandra, Hema G and Sunil, Anantha M and Subbaiah, Venkata Y P and Prathap, P and Gupta, Mukul and Rao, Prasada R (2017) Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors. In: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 28 (23). pp. 18244-18253.

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Official URL: http://doi.org/10.1007/s10854-017-7773-x


In the present paper, a novel process for synthesis of Cu2ZnSnSe4 thin films via low temperature selenization (350 A degrees C) of multiple stacks of binary selenides has been reported. Further, the influence of selenization temperature (250-450 A degrees C) on the physical properties of Cu2ZnSnSe4 thin films was studied and discussed herein. The Rietveld refinement from X-ray diffraction data of Cu2ZnSnSe4 films grown at a selenization temperature of 350 A degrees C was found to be single phase with kesterite type crystal structure and having lattice parameters a = 5.695 , c = 11.334 . Raman spectra recorded using multi excitation wavelength sources under non-resonant and near resonant conditions confirms the formation of single phase Cu2ZnSnSe4 films. Secondary ion mass spectroscopic (SIMS) analysis demonstrated that composition of elements across the thickness is fairly uniform. Energy dispersive X-ray analysis measurement reveals that the obtained films are Cu-poor and Zn-rich. The scanning electron micrographs of binary selenide stacks selenized at a temperature of 350 A degrees C shows randomly oriented cylindrical grains. The optical absorption studies indicated a direct band gap of 1.01 eV. The films showed p-type conductivity with electrical resistivity of 4.66 a''broken vertical bar cm, Hall mobility of 15.17 cm(2) (Vs)(-1) and carrier concentration of 8.82 x 10(16) cm(-3).

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the SPRINGER, VAN GODEWIJCKSTRAAT 30, 3311 GZ DORDRECHT, NETHERLANDS
Department/Centre: Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited: 24 Nov 2017 10:19
Last Modified: 24 Nov 2017 10:19
URI: http://eprints.iisc.ac.in/id/eprint/58292

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