Negative differential resistance and resistive switching in SnO2/ZnO interface

Pant, Rohit and Patel, Nagabhushan and Nanda, K K and Krupanidhi, S B (2017) Negative differential resistance and resistive switching in SnO2/ZnO interface. In: JOURNAL OF APPLIED PHYSICS, 122 (12).

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Abstract

We report a very stable negative differential resistance (NDR) and resistive switching (RS) behavior of highly transparent thin films of the SnO2/ZnO bilayer, deposited by magnetron sputtering. When this bilayer of SnO2/ZnO was annealed at temperatures above 400 degrees C, ZnO diffuses into SnO2 at the threading dislocations and gaps between the grain boundaries, leading to the formation of a ZnO nanostructure surrounded by SnO2. Such a configuration forms a resonant tunneling type structure with SnO2/ZnO/SnO2 center dot center dot center dot center dot center dot center dot center dot ZnO/SnO2 interface formation. Interestingly, the heterostructure exhibits a Gunn diode-like behavior and shows NDR and RS irrespective of the voltage sweep direction, which is the characteristic of unipolar devices. A threshold voltage of similar to 1.68V and a peak-to-valley ratio of current similar to 2.5 are observed for an electrode separation of 2 mm, when the bias is swept from -5V to +5V. It was also observed that the threshold voltage can be tuned with changing distance between the electrodes. The device shows a very stable RS with a uniform ratio of about 3.4 between the high resistive state and the low resistive state. Overall, the results demonstrate the application of SnO2/ZnO bilayer thin films in transparent electronics. Published by AIP Publishing.

Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Additional Information:	Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre:	Division of Chemical Sciences > Materials Research Centre
Date Deposited:	30 Oct 2017 03:40
Last Modified:	30 Oct 2017 03:40
URI:	http://eprints.iisc.ac.in/id/eprint/58108

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