A study of thermal stability and electrical switching behaviour of Ge-Te-In chalcogenide glass system

George, A and Sushamma, D and Predeep, P and Asokan, S (2017) A study of thermal stability and electrical switching behaviour of Ge-Te-In chalcogenide glass system. In: INDIAN JOURNAL OF PHYSICS, 91 (9). pp. 1013-1020.

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Abstract

Bulk Ge20Te80-xInx(x = 0, 6, 10 and 16) glasses are prepared by the conventional melt quenching technique. The crystallization mechanism is studied using differential scanning calorimetry performed at different heating rates under non-isothermal conditions. Also the electrical switching behavior of the given glass system has been investigated. The glass transition temperature (T-g), the peak crystallization temperature (T-p), the thermal stability (T-c-T-g), the average value of the activation energy for the glass transition (E-g), and the average value of the activation energy for crystallization (E-c), are calculated for the given glass system. The glasses studied are found to exhibit a current controlled negative-resistance behaviour and memory switching. Further, the switching voltage (V-t) is found to increase linearly with sample thickness in the range of 0.2-0.45 mm. It is observed that the variation of switching voltage (V-t) of Ge-Te-In glasses show a maximum value at an average coordination number <r> = 2.52 (at x = 6, onset of rigidity percolation), there after decreases and a minimum is seen in the switching voltage at an average coordination number <r> = 2.68 (at x = 14), which is likely to be the chemical threshold of the system. Beyond x = 14, switching voltage is found to increase again with composition.

Item Type:	Journal Article
Publication:	INDIAN JOURNAL OF PHYSICS
Additional Information:	Copy right for this article belongs to the INDIAN ASSOC CULTIVATION SCIENCE, INDIAN J PHYSICS, JADAVPUR, KOLKATA 700 032, INDIA
Department/Centre:	Division of Physical & Mathematical Sciences > Instrumentation Appiled Physics
Date Deposited:	13 Oct 2017 04:52
Last Modified:	13 Oct 2017 04:52
URI:	http://eprints.iisc.ac.in/id/eprint/58027

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