Hybrid Synchronous DC-DC Buck Power Converter using Si and GaN Transistors

Hedayati, Mohammad H and Bharadwaj, Pallavi and John, Vinod (2017) Hybrid Synchronous DC-DC Buck Power Converter using Si and GaN Transistors. In: 2016 IEEE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, DRIVES AND ENERGY SYSTEMS (PEDES) , DEC 14-17, 2016, Trivandrum, INDIA.

PDF IEEE_Int_Con_Pow_Ele_Dri_Ene_Sys_2017.pdf - Published Version Restricted to Registered users only Download (2MB) | Request a copy

Abstract

Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device as active switch and the Si device as synchronous diode is beneficial and has the highest efficiency among the possible converter configurations with an improvement in efficiency by 3-5% for rated conditions.

Item Type:	Conference Proceedings
Publisher:	IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Additional Information:	Copy right for this article belongs to the IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, INDIA, DEC 14-17, 2016
Department/Centre:	Division of Electrical Sciences > Electrical Engineering
Date Deposited:	23 Sep 2017 04:57
Last Modified:	23 Sep 2017 04:57
URI:	http://eprints.iisc.ac.in/id/eprint/57891

Actions (login required)

View Item