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Design and Fabrication of Switching Characterization Set-up for GaN FETs

Bharadwaj, Pallavi and Kumar, Ashish and John, Vinod (2017) Design and Fabrication of Switching Characterization Set-up for GaN FETs. In: 2016 IEEE INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, DRIVES AND ENERGY SYSTEMS (PEDES) , DEC 14-17, 2016, Trivandrum, INDIA.

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Official URL: http://doi.org/10.1109/PEDES.2016.7914240


Wide band gap devices offer significant advantages such as high power density, fast switching and high efficiency. It is important to understand the trade-off involved in switching loss, conduction loss and reverse conduction characteristics for power converter design. Switching characterisation is essential for understanding the behaviour of new enhancement mode Gallium Nitride (GaN) power transistors that are available today. A theoretical method of switching loss estimation is presented in this work along with the development of a double pulse tester (DPT)-board for switching measurements. Careful layout design and measurement methodology is necessary for low measurement noise due to circuit parasitics. The designed DPT board has additional features for synchronous operation, short circuit test and variable temperature measurements. Additionally, the design of an air-core toroidal cage coil inductor is discussed, which ensures non saturated inductive switching of the device, even at high pulsed currents.

Item Type: Conference Proceedings
Publisher: IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Additional Information: Copy right for this article belongs to the IEEE International Conference on Power Electronics, Drives and Energy Systems (PEDES), Trivandrum, INDIA, DEC 14-17, 2016
Department/Centre: Division of Electrical Sciences > Electrical Engineering
Date Deposited: 23 Sep 2017 05:00
Last Modified: 23 Sep 2017 05:00
URI: http://eprints.iisc.ac.in/id/eprint/57885

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