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Hole-Selective Electron-Blocking Copper Oxide Contact for Silicon Solar Cells

Ravindra, Pramod and Mukherjee, Rudra and Avasthi, Sushobhan (2017) Hole-Selective Electron-Blocking Copper Oxide Contact for Silicon Solar Cells. In: IEEE JOURNAL OF PHOTOVOLTAICS, 7 (5). pp. 1278-1283.

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Official URL: http://doi.org/10.1109/JPHOTOV.2017.2720619


Metal-oxide/silicon carrier-selective heterojunctions may be a low-cost high-efficiency alternative to conventional silicon solar cells. Here, a passivated Si/cuprous oxide (Cu2O) hole-selective heterojunction with high open-circuit voltage (V-OC) is reported. Cu2O is abundant, nontoxic, and can be deposited at low temperatures and potentially at low cost. The Si/Cu2O heterojunction has a large conduction band offset of 0.9 eV and a negligible valence band offset, which blocks the transport of electrons but allows the transport of holes. The as-deposited hetero-interface is limited due to a high density of defects. However, the interface defect density can be reduced by a 1.2 nm thin tunneling SiO2 layer, which enables the realization of a Si/Cu2O heterojunction solar cell with an open-circuit voltage (V-OC) of 0.528 V, a 200 mV improvement over the state-of-the-art.

Item Type: Journal Article
Additional Information: Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre: Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited: 16 Sep 2017 06:24
Last Modified: 16 Sep 2017 06:24
URI: http://eprints.iisc.ac.in/id/eprint/57794

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