Dry and Wet Processed Interface Layer in Ge/High-K Devices studied by Deep Level Transient Spectroscopy

Ding, YM and Misra, D (2016) Dry and Wet Processed Interface Layer in Ge/High-K Devices studied by Deep Level Transient Spectroscopy. In: 7th International Symposium on Dielectrics for Nanosystems - Materials Science, Processing, Reliability and Manufacturing held as part of the 229th Meeting of The Electrochemical-Society, MAY 29-JUN 02, 2016, San Diego, CA, pp. 329-333.

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Abstract

Dry and wet processed interface layer quality of Ge/high-k MOS structures were studied by deep level transient spectroscopy (DLTS). The interface treatments were: (i) simple chemical oxidation (Chemox); (ii) chemical oxide removal (COR) followed by 1 nm oxide by slot-plane-antenna (SPA) plasma (COR & and (iii) COR followed by vapor O-3 treatment (COR&O-3). By conducting deep level transient spectroscopy (DLTS) on these three samples, it is found that the dry processed interface (COR&SPAOx and COR&O-3) shows a majority slow trap which was not observed in wet processed interface treatment (Chemox). This results clearly suggest that formation of a different type of interfacial GeOx is responsible for the the additional defect type in dry processed devices.

Item Type:	Conference Proceedings
Series.:	ECS Transactions
Additional Information:	Copy right for this article belongs to the ELECTROCHEMICAL SOC INC, 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	01 Sep 2017 10:27
Last Modified:	05 Mar 2019 11:15
URI:	http://eprints.iisc.ac.in/id/eprint/57736

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