Tunable electron affinity with electronic band alignment of solution processed dielectric

Mondal, Sandip and Venkataraman, V (2017) Tunable electron affinity with electronic band alignment of solution processed dielectric. In: APPLIED PHYSICS LETTERS, 111 (4).

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Abstract

We report the tunability of the electronic band structure, especially the electron affinity, of an all-inorganic precursor processed sol-gel aluminium oxide phosphate dielectric by the influence of processing temperature. The dielectric offers tunable electron affinity ranging from 1.42 eV to 0.72 eV with the change in processing temperature from as-prepared to 1000 degrees C, respectively. The remarkable change in electron affinity is ascribed to the variation in the bulk oxygen concentration in solution processed oxide. As a result, the leakage current of the dielectric is affected significantly by a factor of similar to 10(3). Published by AIP Publishing.

Item Type:	Journal Article
Publication:	APPLIED PHYSICS LETTERS
Additional Information:	Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	01 Sep 2017 09:58
Last Modified:	01 Sep 2017 09:58
URI:	http://eprints.iisc.ac.in/id/eprint/57725

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