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Trends in molecular design strategies for ambient stable n-channel organic field effect transistors

Dhar, Joydeep and Salzner, Ulrike and Patil, Satish (2017) Trends in molecular design strategies for ambient stable n-channel organic field effect transistors. In: JOURNAL OF MATERIALS CHEMISTRY C, 5 (30). pp. 7404-7430.

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Official URL: http://doi.org/10.1039/c6tc05467f


In recent years, organic semiconducting materials have enabled technological innovation in the field of flexible electronics. Substantial optimization and development of new pi-conjugated materials has resulted in the demonstration of several practical devices, particularly in displays and photoreceptors. However, applications of organic semiconductors in bipolar junction devices, e.g. rectifiers and inverters, are limited due to an imbalance in charge transport. The performance of p-channel organic semiconducting materials exceeds that of electron transport. In addition, electron transport in pi-conjugated materials exhibits poorer atmospheric stability and dispersive transient photocurrents due to extrinsic carrier trapping. Thus development of air stable n-channel conjugated materials is required. New classes of materials with delocalized n-doped states are under development, aiming at improvement of the electron transport properties of organic semiconductors. In this review, we highlight the basic tenets related to the stability of n-channel organic semiconductors, primarily focusing on the thermodynamic stability of anions and summarizing the recent progress in the development of air stable electron transporting organic semiconductors. Molecular design strategies are analysed with theoretical investigations.

Item Type: Editorials/Short Communications
Additional Information: Copy right for this article belongs to the ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Department/Centre: Division of Chemical Sciences > Solid State & Structural Chemistry Unit
Date Deposited: 01 Sep 2017 06:59
Last Modified: 03 Oct 2018 14:21
URI: http://eprints.iisc.ac.in/id/eprint/57698

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