Effect of Post Plasma Oxidation on Ge Gate Stacks Interface Formation

Mukhopadhyay, S and Mitra, S and Ding, YM and Ganapathi, KL and Misra, D and Bhat, N and Tapily, K and Clark, RD and Consiglio, S and Wajda, CS and Leusink, GJ (2016) Effect of Post Plasma Oxidation on Ge Gate Stacks Interface Formation. In: International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 held as a part of the 229th Meeting of The Electrochemical-Society , MAY 29-JUN 02, 2016, San Diego, CA, pp. 303-312.

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Abstract

This work investigates the application of slot plane antenna plasma oxidation (SPAO) during dielectric deposition to process TiN/ZrO2/Al2O3/Ge MOS capacitors. The impact of SPAO exposure on effective oxide thickness (EOT), leakage current, interface state density (Dit), C-V hysteresis, oxide breakdown characteristics was studied. Considerable degradation of electrical properties was observed with SPAO being performed before Al2O3/ZrO2 gate stack deposition. When SPAO was performed in between Al2O3/ZrO2 deposition, moderate increase in EOT and significant decrease in Dit was observed. This can be attributed to the formation of a thicker GeOX layer. On the other hand, when SPAO was performed after the deposition of both the high-k layers, higher Dit was observed suggesting a GeO2 layer formation. Time zero dielectric breakdown (TZDB) characteristics indicate that plasma exposure after and in between Al2O3/ZrO2 deposition enhances the dielectric quality by film densification due to plasma exposure. It was also demonstrated that improved dielectric and interface quality can be achieved when ALD-Al2O3/ZrO2 gate stacks were exposed to SPAO.

Item Type:	Conference Proceedings
Series.:	ECS Transactions
Additional Information:	Copy right for this article belongs to the ELECTROCHEMICAL SOC INC, 65 S MAIN ST, PENNINGTON, NJ 08534-2839 USA
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	24 Aug 2017 06:59
Last Modified:	01 Mar 2019 09:51
URI:	http://eprints.iisc.ac.in/id/eprint/57679

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