Manipulation of Optoelectronic Properties and Band Structure Engineering of Ultrathin Te Nanowires by Chemical Adsorption

Roy, Ahin and Amin, Kazi Rafsanjani and Tripathi, Shalini and Biswas, Sangram and Singh, Abhishek K and Bid, Aveek and Ravishankar, N (2017) Manipulation of Optoelectronic Properties and Band Structure Engineering of Ultrathin Te Nanowires by Chemical Adsorption. In: ACS APPLIED MATERIALS & INTERFACES, 9 (23). pp. 19462-19469.

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Abstract

Band structure engineering is a powerful technique both for the design of new semiconductor materials and for imparting new functionalities to existing ones. In this article, we,present a novel and versatile technique to achieve this by surface adsorption on low dimensional systems. As a specific example, we demonstrate, through detailed experiments and ab initio simulations, the controlled modification of band structure in ultrathin Te nanowires due to NO2 adsorption. Measurements of the temperature dependence of resistivity of single ultrathin Te nanowire field-effect transistor (FET) devices exposed to increasing amounts of NO2 reveal a gradual transition from a semiconducting to a metallic state. Gradual quenching of vibrational Raman modes of Te with increasing concentration of NO2 supports the appearance of a metallic state in NO2 adsorbed Te. Ab initio simulations attribute these observations to the appearance of midgap states in NO2 adsorbed Te nanowires. Our results provide fundamental insights into the effects of ambient on the electronic structures of low-dimensional materials and can be exploited for designing novel chemical sensors.

Item Type:	Journal Article
Publication:	ACS APPLIED MATERIALS & INTERFACES
Additional Information:	Copy right for this article belongs to the AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Department/Centre:	Division of Chemical Sciences > Materials Research Centre Division of Physical & Mathematical Sciences > Physics
Date Deposited:	14 Jul 2017 10:29
Last Modified:	14 Jul 2017 10:29
URI:	http://eprints.iisc.ac.in/id/eprint/57387

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