Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete?

Paul, Milova and Russ, Christian and Kumar, B Sampath and Gossner, Harald and Shrivastava, Mayank (2017) Physics of Current Filamentation in ggNMOS Revisited: Was Our Understanding Scientifically Complete? In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 391-394.

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Abstract

Serious flaws in conventional understanding related to current filamentation and failure in ggNMOS is addressed. The conventional theory is revisited with new physical insights toward current filamentation. Filament dynamics under electrical and thermal instabilities is discussed while correlating it with stress time and current, silicide blocking and S/D doping.

Item Type:	Conference Proceedings
Series.:	International Conference on VLSI Design
Additional Information:	Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	08 Jul 2017 07:40
Last Modified:	08 Jul 2017 07:40
URI:	http://eprints.iisc.ac.in/id/eprint/57333

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