ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis

Shankar, Bhawani and Soni, Ankit and Singh, Manikant and Soman, Rohith and Bhat, KN and Raghavan, Srinivasan and Bhat, Navakanta and Shrivastava, Mayank (2017) ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis. In: 30th International Conference on VLSI Design / 16th International Conference on Embedded Systems (VLSID), JAN 07-11, 2017, Hyderabad, INDIA, pp. 361-365.

PDF Int_Con_VLSI_Des_361_2017.pdf - Published Version Restricted to Registered users only Download (3MB) | Request a copy

Abstract

This experimental study reports ESD failure analysis of AlGaN/GaN HEMTs. Effect of MESA isolation, gate and parasitic MESA Schottky diode on ESD robustness is studied. Cause of snapback instability, multiple NDCs and transition from soft-to-hard failure are discussed. Unique leakage trends and cumulative nature of degradation are discovered. Post failure analysis reveals role of inverse piezoelectric effect, fringing electric field, contact resistivity, temperature and field induced contact metal migration in degradation of AIGaN/GaN HEMTs under ESD conditions.

Item Type:	Conference Proceedings
Series.:	International Conference on VLSI Design
Additional Information:	Copy right for this article belongs to the IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology) Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	08 Jul 2017 07:36
Last Modified:	25 Feb 2019 11:19
URI:	http://eprints.iisc.ac.in/id/eprint/57332

Actions (login required)

View Item