High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector

Pratiyush, Anamika Singh and Krishnamoorthy, Sriram and Solanke, Swanand Vishnu and Xia, Zhanbo and Muralidharan, Rangarajan and Rajan, Siddharth and Nath, Digbijoy N (2017) High responsivity in molecular beam epitaxy grown beta-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector. In: APPLIED PHYSICS LETTERS, 110 (22).

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Abstract

In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial beta-Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The (-201)-oriented beta-Ga2O3 thin film was grown using plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4V with a UV to visible rejection ratio > 10(5). The devices exhibited very low dark current < 10 nA at 20V and showed no persistent photoconductivity (PPC) as evident from the sharp transients with a photo-to-dark current ratio > 10(3). These results represent the state-of-art performance for the MBE-grown beta-Ga2O3 MSM solar blind detector. Published by AIP Publishing.

Item Type:	Journal Article
Publication:	APPLIED PHYSICS LETTERS
Additional Information:	Copyright for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre:	Division of Interdisciplinary Sciences > Centre for Nano Science and Engineering
Date Deposited:	08 Jul 2017 07:13
Last Modified:	08 Jul 2017 07:13
URI:	http://eprints.iisc.ac.in/id/eprint/57327

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