Characteristics of VFTO Generated in a GIS with $SF_6-N_2$ Gas Mixture as the Insulating Medium

Singha, Santanu and Joy, Thomas M and Naidu, MS (2000) Characteristics of VFTO Generated in a GIS with $SF_6-N_2$ Gas Mixture as the Insulating Medium. In: Conference Record of the 2000 IEEE International Symposium on Electrical Insulation, 2-5 April, Anaheim,CA USA, 284 -287.

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Abstract

This paper deals with the experimental characteristics of VFTO in pure $N_2$, pure $SF_6$ and $SF_6-N_2$ mixtures. The investigations are performed using a laboratory model bus duct. A capacitive type voltage sensor was used to measure the VFTO peak magnitudes and temporal characteristics. Measurements were carried out in $N_2$, $SF_6$ and $SF_6-N_2$ mixtures wherein the $SF_6$ concentration was varied from 10% to 40% over a pressure range of 1 bar to 5 bars. The results from the VFTO characteristics obtained for $SF_6$ and $SF_6-N_2$ mixtures show similar trends in variations. The levels of surge peak magnitudes are less than 2 p,u. for all the cases considered in the experimental pressure range. In $N_2$, the peak magnitude remains almost constant with increasing pressure but for pure $SF_6$, it increases almost linearly with pressure. On the other hand, for the gas mixtures, the difference in peak magnitudes is not significant at pressures between 2 to 4 bars. The occurrence of corona stabilization during breakdown of the gap is thought to be the cause for this behavior.

Item Type:	Conference Paper
Publisher:	IEEE
Additional Information:	Copyright 1990 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Department/Centre:	Division of Electrical Sciences > High Voltage Engineering (merged with EE)
Date Deposited:	28 Feb 2006
Last Modified:	19 Sep 2010 04:24
URI:	http://eprints.iisc.ac.in/id/eprint/5731

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