Das, Subhas Chandra and Narayanan, G (2017) Variation of Switching Sub-intervals of IGBT with Device Current and Junction Temperature: An Experimental Study. In: IEEE Annual India Conference (INDICON), DEC 16-18, 2016, Bangalore, INDIA.
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Abstract
In this paper focus is to study various transition subintervals of an IGBT during switching events. The relationship of these transition duration with the switching voltage, device current and junction temperature is studied experimentally. This study is further extended to understand the effect of these time duration deciding the dead time between the switching of positive and negative devices in an inverter leg. Further quantification is made based on these switching sub-intervals in terms of loss of pulse width time in output voltage of an inverter.
Item Type: | Conference Proceedings |
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Series.: | Annual IEEE India Conference |
Publisher: | IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA |
Additional Information: | IEEE Annual India Conference (INDICON), Bangalore, INDIA, DEC 16-18, 2016 |
Department/Centre: | Division of Electrical Sciences > Electrical Engineering |
Date Deposited: | 10 Jun 2017 04:41 |
Last Modified: | 10 Jun 2017 04:41 |
URI: | http://eprints.iisc.ac.in/id/eprint/57207 |
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