Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET

Chakraborty, Ananda Sankar and Mahapatra, Santanu (2017) Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET. In: IEEE TRANSACTIONS ON ELECTRON DEVICES, 64 (4). pp. 1519-1527.

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Abstract

Formulation of accurate yet computationally efficient surface potential equation (SPE) is the fundamental step toward developing compact models for low effective mass channel quantum well MOSFETs. In this paper, we propose a new SPE for such devices considering multisubband electron occupancy and oxide thickness asymmetry. Unlike the previous attempts, here, we adopt purely physical modeling approaches (such as without mixing the solutions from finite and infinite potential wells or using any empirical model parameter), while preserving the mathematical complexity almost at the same level. Gate capacitances calculated from the proposed SPE are shown to be in good agreement with numerical device simulation for wide range of channel thickness, effective mass, oxide thickness asymmetry, and bias voltages.

Item Type:	Journal Article
Publication:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Additional Information:	Copy right for this article belongs to the IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 USA
Department/Centre:	Division of Electrical Sciences > Electronic Systems Engineering (Formerly Centre for Electronic Design & Technology)
Date Deposited:	20 May 2017 05:31
Last Modified:	20 May 2017 05:31
URI:	http://eprints.iisc.ac.in/id/eprint/56904

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