Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications

Kumar, Arvind and Mondal, Sandip and Rao, K S R , Koteswara (2017) Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications. In: JOURNAL OF APPLIED PHYSICS, 121 (8).

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Item Type:	Journal Article
Publication:	JOURNAL OF APPLIED PHYSICS
Additional Information:	Copy right for this article belongs to the AMER INST PHYSICS, 1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Department/Centre:	Division of Physical & Mathematical Sciences > Physics
Date Deposited:	22 Apr 2017 04:53
Last Modified:	22 Apr 2017 04:53
URI:	http://eprints.iisc.ac.in/id/eprint/56570

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